| 摘要 |
PURPOSE: A method for fabricating a semiconductor device through a selective epitaxial growth(SEG) process is provided to form an excellent SEG contact plug in a cell region regardless of the position of a wafer while process stability is guaranteed, by inserting an SEG dummy pattern into a region having no cell when a plurality of contact plugs are formed in the cell region by an SEG process. CONSTITUTION: An insulation layer in a region having no cell pattern and a selected portion of an active region of a silicon substrate are eliminated to form a dummy trench by a dummy trench etch process. An SEG dummy pattern is formed in the dummy trench portion by an SEG process.
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