| 摘要 |
PURPOSE: A contact of semiconductor devices and its formation method are provided to prevent short between a gate electrode and a contact interconnection even though design rule reduces. CONSTITUTION: A contact of semiconductor devices comprises an isolation oxide layer(22) formed in a shallow trench and a cylindrical structure oxide layer(23) on a semiconductor substrate. Both sides of the cylindrical structure oxide layer serves as a sidewall oxide layer(23a) and the gap between the both sides as a gate oxide layer(23b). In the both sides of the cylindrical structure oxide layer, an impurity region of a source/drain(25) is formed. In the gap between both sides as a gate oxide layer, a gate electrode(26) and a silicide(27) are sequentially formed. A sidewall spacer(28) comprised of a silicon nitride layer is formed in the both sides of the sidewall oxide layer.
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