| 摘要 |
PURPOSE: A method for fabricating a dummy pattern of a semiconductor device is provided to form a semiconductor device having uniform density of metal, by selectively forming a real dummy pattern according to the density of metal formed on a semiconductor substrate. CONSTITUTION: The dummy pattern is selectively formed according to the density of a metal line formed on the semiconductor substrate(11), wherein the overall density of the meal line and the dummy pattern is uniformly maintained on the entire surface of the semiconductor substrate. The density of the dummy pattern is determined by the interval between the dummy pattern and the metal line.
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