| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve step coverage between the upper portion of a field oxide layer and the upper portion of a junction region, by forming a trench in a predetermined portion of a semiconductor substrate and by forming an insulation layer of Si3N4 on the resultant structure. CONSTITUTION: An oxide barrier layer is deposited on a predetermined portion of the semiconductor substrate(21). A predetermined portion of the oxide barrier layer and the semiconductor substrate is etched to form the trench(25). The insulation layer(26) is formed on the resultant structure including the trench. The field oxide layer is deposited on the insulation layer. The oxide barrier layer is etched while the field oxide layer is polished to fill the trench. A gate electrode is formed in a predetermined portion of the resultant structure including the trench. Ions are implanted into a predetermined portion of the semiconductor substrate to form a junction region by using the gate electrode as a mask. Silicide is formed on the gate electrode and the junction region.
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