| 摘要 |
PROBLEM TO BE SOLVED: To provide nitriding equipment which has a high forming rate of nitride layer on the surface of a component to be treated, and which can control a nitride layer and a diffusion layer. SOLUTION: This equipment has a discharge chamber for generating discharge plasma, a specimen support 37 for mounting a material to be treated and a nitriding chamber 3 provided with a source gas supply port, arranges an acceleration electrode 31 in the nitriding chamber, transfers electron from the discharge chamber into the nitriding chamber by the acceleration electrode, accelerates it, and coverts source gas including indoor nitrogen to plasma, to make it react with the surface of the material to be treated 35. Preferably, nitrogen gas is employed as source gas, and the material to be treated is arranged in parallel with a flowing direction of electron, away from the center of electron current. |
