METHOD FOR FABRICATING STORAGE ELECTRODE OF CAPACITOR

摘要

PURPOSE: A method for fabricating a storage electrode of a capacitor is provided to decrease the number of defects and to improve an electrical characteristic, by improving adhesion of the storage electrode and a contact plug. CONSTITUTION: An interlayer dielectric(3) is formed on a semiconductor substrate(1) having various elements for forming a semiconductor device. A contact hole to which a junction part of the semiconductor substrate is exposed is formed. A conductive material is deposited on the semiconductor substrate. A chemical mechanical polishing(CMP) process is performed to make the conductive material left only in the contact hole so that a contact plug(4) is formed. A nitride layer(5), the first oxide layer(6) and the second oxide layer are sequentially deposited. A predetermined portion of the second oxide layer, the first oxide layer and the nitride layer is etched to expose the contact plug. A conductive material is deposited and etched back. The conductive material on the second oxide layer is removed to form the first storage electrode while even the contact plug is over-etched to form an etch inclined surface on the contact plug. A conductive material is deposited on the resultant structure. A CMP process is performed to remove the conductive material on the second oxide layer so that the second storage electrode is formed while the storage electrode(8) is formed. The second oxide layer is eliminated.