METHOD FOR CRYSTALLIZING SILICON LAYER

摘要

PURPOSE: A method for crystallizing a silicon layer is provided to obtain uniform crystallinity at a low temperature, by forming a thermal passivation layer on a metal catalyst and the silicon layer when the metal catalyst is accelerated by an electric field to crystallize the silicon layer. CONSTITUTION: A substrate(110) is prepared. An amorphous silicon layer(130) is formed on the substrate. A transition metal layer is formed on the amorphous silicon layer. The thermal passivation layer(150) is formed on the transition metal layer. Electrodes(160) are formed at both ends of the upper portion of the thermal passivation layer. A heat treatment process is performed regarding the substrate having the thermal passivation layer while a voltage is applied to the electrodes to crystallize the amorphous silicon layer. The thermal passivation layer is eliminated.