| 摘要 |
PURPOSE: A method for driving a flash memory device is provided to improve an initial read speed by generating boosting voltage within a short time. CONSTITUTION: An address transition detection signal(ATD) is controlled by an address valid bar signal(ADV#). The address transition detection signal(ATD) is output in a high state by detecting transition of an address when a chip enable signal(CE#) or the address valid bar signal(ADV#) is enabled in a low state. The address transition detection signal(ATD) is not generated by an invalid address signal. Boosting voltage is generated by transiting a kick signal(KICK) from the low state to the high state in a rising edge of the address transition detection signal(ATD). The kick signal is transited from the high state to the low state by converting a delay signal of the address transition detection signal(ATD) to a kick disable signal(KICK disable). The kick signal is output again in a rising state of the address transition detection signal(ATD).
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