| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III element nitride film containing Al, on which no crack is generated when the film is formed directly on a crystalline substrate such as a single crystal substrate, an epitaxial substrate, or the like. SOLUTION: The film is grown and formed on a c-plane directly on a crystalline substrate, is a hexagonal system crystal, and is a group III element nitride film containing at least Al. The lattice constant c of the principal axis of the group III element nitride film and the lattice constant a of the crystalline plane perpendicular to the principal axis satisfy the relation: c>2.636a-3.232. |
