发明名称 METHOD OF MANUFACTURING CMOS SEMICONDUCTOR COMPONENTS WITH LOCAL INTERCONNECTS
摘要 A method of fabricating CMOS devices with local interconnects is disclosed which is performed in two stages. In the first stage, a SALICIDE process is carried out, and in the second stage, the local interconnects are formed.
申请公布号 EP0600063(B2) 申请公布日期 2002.07.10
申请号 EP19930912923 申请日期 1993.06.09
申请人 MICRONAS GMBH 发明人 WILMSMEYER, KLAUS
分类号 H01L21/768;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L21/768 主分类号 H01L21/768
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