| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to simplify a fabricating process by preventing a punch-through phenomenon and controlling a threshold voltage through an ion implantation process, and to improve a refresh characteristic by reducing an electric field of a substrate at a gate edge portion. CONSTITUTION: A field region and an active region are defined in a semiconductor substrate(21). An isolation layer is formed in the field region. Impurity ions for preventing punch-through are implanted into the semiconductor substrate to form a punch stop impurity region(23). A gate electrode(25) is formed on the semiconductor substrate by interposing a gate insulation layer(24). A lightly doped drain(LDD) region(26) is formed in the surface of the semiconductor substrate at both sides of the gate electrode. A sidewall spacer(27) is formed on both side surfaces of the gate electrode. A source/drain impurity region(28) is formed in the surface of the semiconductor substrate at both sides of the sidewall spacer.
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