METHOD FOR FABRICATING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a contact hole of a semiconductor device is provided to easily form a fine contact hole of a desired size, by using an etch stop layer having high etch selectivity regarding an interlayer oxide layer. CONSTITUTION: An interlayer dielectric(12) is formed on a substrate(11). The etch stop layer is formed on the interlayer dielectric by using a material having high etch selectivity regarding the interlayer dielectric. A photoresist layer pattern having such a slope that an interval between upper portions is larger than an interval between lower portions, is formed on the etch stop layer. The etch stop layer is etched by using the photoresist layer pattern as a mask. The photoresist layer pattern is eliminated. The interlayer dielectric is etched to form a contact hole(16) in the substrate by using the etched etch stop layer as a mask.