| 摘要 |
A storage using a memory device with a continuous transfer function as typified by an SRAM (Synchronous Random Access Memory) or a DRAM (Dynamic RAM) with an EDO (Extended Data Out) is disclosed. As for the detection/correction of data errors, the storage reduces the ratio of the number of check bits to the number of data bits by effectively using a burst transfer function available with the memory device. This allow a single memory device to recover from faults. This can be done with means for dividing an ECC unit into a plurality of parts in a continuous transfer direction and writing one of them in the memory device at a time, and means for detecting/correcting the errors of data read out of the memory device while buffering them on an ECC basis.
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