发明名称 |
Method of fabricating a bottom electrode |
摘要 |
A method of fabricating a bottom electrode is described. A substrate having a conductive layer therein is provided. A first dielectric layer is formed over the substrate. A conductive plug is formed through the first dielectric layer to electrically couple with the conductive layer. A cap layer is formed over the substrate to cover the conductive plug. An isolation layer is formed over the cap layer. A plurality of bit lines is formed over the isolation layer. A second dielectric layer is formed over the isolation layer. A node contact opening is formed through the second dielectric layer, the bit lines and the isolation layer to expose the cap layer. A conformal isolation layer is formed over the substrate to partially fill the contact node opening. A third dielectric layer having an opening is formed over the substrate. The opening is aligned with the node contact opening. An etching step is performed to remove a portion of the conformal isolation layer exposed by the opening and the cap layer. An isolation spacer remaining from the conformal isolation layer is formed on a sidewall of the contact node opening. A conformal conductive layer is formed in the opening and the node contact opening to make contact with the conductive plug. The third dielectric layer is removed.
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申请公布号 |
US6417065(B1) |
申请公布日期 |
2002.07.09 |
申请号 |
US20000718190 |
申请日期 |
2000.11.20 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
WU KING-LUNG;LIN KUN-CHI |
分类号 |
H01L21/02;H01L21/60;H01L21/768;H01L21/8242;(IPC1-7):H01L21/824;H01L21/20;H01L21/320 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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