Method for treating the surface of a deep trench

摘要

A method of treating the surface of a deep trench is disclosed. After forming a deep trench in a silicon substrate, the silicon substrate near the surfaces of the deep trench is treated to become amorphous. An annealing process is executed to make the amorphous silicon layer recrystallize into its original lattice arrangement, so as to reduce lattice defects in the surface of the deep trench.