发明名称 |
Method to produce small space pattern using plasma polymerization layer |
摘要 |
The present invention relates to a method for forming an etch mask. A photoresist layer is patterned, wherein d1 is a smallest space dimension of an exposed area of a layer underlying the photoresist layer. A polymer layer is formed to be conformal to the patterned photoresist layer and exposed portions of the underlayer. The polymer layer is etched to form polymer sidewalls, the polymer sidewalls reducing the smallest space dimension of the exposed underlayer area to d2, wherein d2<d1.
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申请公布号 |
US6416933(B1) |
申请公布日期 |
2002.07.09 |
申请号 |
US19990283889 |
申请日期 |
1999.04.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SINGH BHANWAR;RANGARAJAN BHARATH;YANG WENGE |
分类号 |
G03C5/00;H01L21/027;H01L21/033;H01L21/311;H01L21/312;(IPC1-7):G03C5/00 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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