发明名称 |
Method to prevent electrostatic discharge for MR/GMR wafer fabrication |
摘要 |
Methods and structures are disclosed which avoid electrostatic charge build up and subsequent electrostatic discharge (ESD) during the wafer fabrication process of magnetoresistive (MR) or giant magnetoresistive (GMR) read/write heads of magnetic disk drives. This is achieved by designing the wafer layout and process so that the MR/GMR sensor film is shorted to the magnetic shields of the head through shorting paths so that there is an equal potential between MR/GMR sensor film and magnetic shields during the entire fabrication process.
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申请公布号 |
US6415500(B1) |
申请公布日期 |
2002.07.09 |
申请号 |
US20000482050 |
申请日期 |
2000.01.13 |
申请人 |
HEADWAY TECHNOLOGIES, INC. |
发明人 |
HAN CHERNG-CHYI;CHEN MAO-MIN;KOO JEN-WEI;LEE RODNEY;ZHU LI-YAN;CHANG JEI-WEI |
分类号 |
G11B5/31;G11B5/39;G11B5/40;(IPC1-7):G11B5/127;H04R31/00 |
主分类号 |
G11B5/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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