| 摘要 |
PURPOSE: A method for fabricating an intermetal dielectric(IMD) of a semiconductor device is provided to greatly decrease parasitic capacitance between the same IMD's or between upper and lower IMD's, by forming a single IMD structure of a fluorinated silicate glass(FSG) layer having a low dielectric constant. CONSTITUTION: A metal interconnection(301) is formed on a semiconductor substrate(300) having a lower structure. A low density FSG layer(302) having fluorine of 3-5 percent is formed. A high density FSG layer(302) having fluorine of 10-15 percent is formed. A low density FSG layer(304) having fluorine of 5-10 percent is formed. An undoped silicate glass(USG) layer is formed. After a chemical mechanical polishing(CMP) process is performed, a subsequent process is performed.
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