发明名称 |
Method of processing residue of ion implanted photoresist, and method of producing semiconductor device |
摘要 |
In order to carry out ashing at a high efficiency without leaving any residue and also to inhibit corrosion of an underlying material of a resist and further to prevent particle contamination, a photoresist is ashed at a low temperature to be removed and a residue of the photoresist is removed at a high temperature.
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申请公布号 |
US6417080(B1) |
申请公布日期 |
2002.07.09 |
申请号 |
US20000491876 |
申请日期 |
2000.01.27 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YOKOSHIMA SHIGENOBU |
分类号 |
G03F7/42;H01L21/311;(IPC1-7):H01L21/306 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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