发明名称 |
Method for fabricating semiconductor integrated circuit device |
摘要 |
A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vicinity of a semiconductor wafer, and forming a thin oxide film serving as a gate insulating film of an MOS transistor and having a thickness of 5 nm or below on the main surface of the semiconductor wafer at an oxide film-growing rate sufficient to ensure fidelity in formation of an oxide film and uniformity in thickness of the oxide film.
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申请公布号 |
US6417114(B2) |
申请公布日期 |
2002.07.09 |
申请号 |
US20010752736 |
申请日期 |
2001.01.03 |
申请人 |
HITACHI, LTD. |
发明人 |
TANABE YOSHIKAZU;SAKAI SATOSHI;NATSUAKI NOBUYOSHI |
分类号 |
H01L21/00;H01L21/28;H01L21/306;H01L21/31;H01L21/314;H01L21/316;H01L21/336;H01L21/469;H01L21/76;H01L21/8238;H01L29/423;H01L29/51;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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