发明名称 Tunneling magnetoresistive element using a bias magnetic field
摘要 The present application provides a magneto-resistive element excellent in symmetry of playback waveforms. The basic construction of the present application is as follows. That is, a magnetic layer 13, an insulating layer 14, and a magnetic layer 15 are laminated; a power supply 18 for applying a voltage between two magnetic layers is provided; an anti-ferromagnetic layer 16 is laminated on the magnetic layer 15, direction of which magnetization is substantially parallel or counter-parallel with a detecting direction of an external magnetic field, and when the external magnetic field is not present, a power supply 17 for causing a current to flow in a non-magnetic metal layer 12 and in an inner direction of a layer surface thereof is provided so that a direction of magnetization of the magnetic layer 13 is substantially at right angles to the detecting direction of the external magnetic field; and there is provided a signal detector 19 for detecting a change of current tunneling through an insulating layer when the direction of magnetization of the magnetic layer 13 is changed by the external magnetic field.
申请公布号 US6418001(B1) 申请公布日期 2002.07.09
申请号 US19990467729 申请日期 1999.12.20
申请人 HITACHI, LTD. 发明人 NAKATANI RYOICHI
分类号 G11B5/00;G11B5/39;G11C11/15;G11C11/16;(IPC1-7):G11B5/39 主分类号 G11B5/00
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