| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to prevent a seed layer from being re-deposited under a lower electrode, by forming the seed layer used for forming the lower electrode in the lower portion of a contact hole. CONSTITUTION: After a gate electrode(35) is deposited on a semiconductor substrate(31) having a predetermined structure, an etch process is performed to expose a predetermined portion of the semiconductor substrate so that the first contact hole is formed. The first contact plug(41) is formed in the first contact hole. The seed layer(42) is formed to fill the first contact hole. A bitline(43) is formed in a predetermined portion of the resultant structure including the seed layer. After an insulation layer(34) is deposited on the resultant structure including the bitline, an etch process is performed to expose the first contact plug so that the second contact hole is formed. The second contact plug(47) is formed to fill the second contact hole. After a dummy pattern layer(48) is deposited on the resultant structure including the second contact plug, an etch process is performed to expose the second contact plug so that the third contact hole is formed. The lower electrode(49) is formed to fill the third contact hole. A dielectric layer and an upper electrode are sequentially formed on the resultant structure including the lower electrode.
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