| 摘要 |
PURPOSE: A method for fabricating a metal interconnection in a process for fabricating a semiconductor device is provided to improve reliability of the semiconductor device, by effectively recovering a fine defect generated on the surface of an aluminum damascene interconnection after a chemical mechanical polishing(CMP) process is performed. CONSTITUTION: After an aluminum interconnection(103) is formed, a CMP process is performed. An AlOx layer is eliminated in a high vacuum state not higher than 10¬-7 Torr by a radio frequency(RF) etch method using argon ions. A heat treatment process is performed at a temperature from 350 to 500 deg.C and in a high vacuum state not higher than 10¬-7 Torr.
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