| 摘要 |
A circuit for driving a non-volatile ferroelectric memory is provided in which a driver has a boost circuit that simplifies a wordline driver and applies a boosted voltage to a wordline without loss of a threshold voltage. The driving circuit increases a current driving capability and increases integration. The memory includes a plurality of split wordline pairs each having a first split wordline and a second split wordline, a plurality of bitlines in a direction crossing the split wordline pairs, and a cell array having a plurality of unit cells each with a switching transistor and a ferroelectric capacitor both coupled between each of the wordline pairs and each of the bitlines. The driving circuit can include an X address signal forwarder having a first plurality of transistors coupled to the global wordline controlled by a global X decoder, a split wordline driving signal forwarder having a second plurality of transistors each for providing a driving signal for drilling the first and second wordline pair under the control of an output voltage of a corresponding one the of the first transistors, and a bypass between the global wordline and the first and second split wordlines for bypassing floating voltages on the split wordlines. The first plurality of transistors can be coupled to the corresponding global wordline in series or in parallel.
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