发明名称 Method of forming solder bumps with reduced undercutting of under bump metallurgy (UBM)
摘要 In a method of forming solder bumps, each solder bump is formed over a corresponding one of a plurality of chip pads of an active upper surface of a semiconductor device. An under bump metallurgy (UBM) is formed on the upper surface of the semiconductor device and the chip pads. A photoresist layer is deposited thereto and patterned to expose the under bump metallurgy on the chip pads. The solder bumps are formed on the under bump metallurgy exposed from the photoresist patterns, and the photoresist patterns are removed. An intermetallic compound layer (IMC) is formed on an interface between the solder bump and the under bump metallurgy by heating the solder bump at a temperature lower than a melting point of the solder bump. Then, the under bump metallurgy is etched by using the IMC as a mask, and the solder bumps are reflowed. The present invention obtains sufficient joint area between the under bump metallurgy and the solder bump as well as joint area between the under bump metallurgy and the buffer layer, and reduces the undercutting of the under bump metallurgy and thereby improves the mechanical and the electrical reliability of the solder bumps.
申请公布号 US6417089(B1) 申请公布日期 2002.07.09
申请号 US20000632903 申请日期 2000.08.04
申请人 SAMSUNG ELECTRONICS, CO., LTD. 发明人 KIM BYUNG SOO;LEE CHANG HUN
分类号 H01L21/60;H01L23/485;(IPC1-7):H01L21/60 主分类号 H01L21/60
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