| 摘要 |
A magnetic memory device, preferably a magnetic random access memory (MRAM) and method for forming same are described wherein a bit region sensitive to magnetic fields and preferably comprising a tunneling magnetoresistance (TMR) structure is located between a top electrode with a magnetic keeper and a bottom electrode with a magnetic keeper. The top electrode is preferably made of copper using a damascene process. The magnetic keeper of the top electrode includes at least a magnetic material layer (e.g., Co-Fe) but in the illustrated embodiments also includes one or more barrier layer (e.g., Ta). Various embodiments describe structures wherein the magnetic keeper stack is in contact with one, two or three surfaces of the top electrode, which face outward from the device.
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