发明名称 |
Spin-dependent tunneling sensor suitable for a magnetic memory |
摘要 |
A method and system for providing a top pinned spin-dependent tunneling sensor is disclosed. The method and system include providing a free layer, a tunneling barrier, a synthetic pinned layer and an antiferromagnetic layer. The free layer is ferromagnetic. The tunneling barrier is an insulator. The tunneling barrier is disposed between the free layer and the synthetic pinned layer. The synthetic pinned layer is ferromagnetic and includes a ferromagnetic top layer. The synthetic pinned layer is between the tunneling barrier and the antiferromagnetic layer. The ferromagnetic top layer acts as a seed layer for the antiferromagnetic layer.
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申请公布号 |
US6418048(B1) |
申请公布日期 |
2002.07.09 |
申请号 |
US20010969315 |
申请日期 |
2001.10.02 |
申请人 |
READ-RITE CORPORATION |
发明人 |
SIN KYUSIK;FUNADA SHIN;HINER HUGH C.;SHI XIZENG |
分类号 |
G11C11/15;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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