发明名称 |
Latch free IGBT with schottky gate |
摘要 |
A three layer IGBT which cannot latch on is provided with a trench gate and a Schottky contact to the depletion region surrounding the trench gate. An emitter contact is connected to base diffusion regions which are diffused into the depletion region. The depletion region is formed atop an emitter region which emits carriers into the depletion region in response to the turn on of the gate and the injection of carriers from the Schottky gate.
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申请公布号 |
US6417554(B1) |
申请公布日期 |
2002.07.09 |
申请号 |
US20000559282 |
申请日期 |
2000.04.27 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
AHMED IFTIKHAR |
分类号 |
H01L29/739;H01L29/872;(IPC1-7):H01L27/095 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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