发明名称 |
LOW POWER AND NOISE AMPLIFIER |
摘要 |
PURPOSE: A low power and noise amplifier is provided to obtain a high power gain with a low power and improve a linearity. CONSTITUTION: The low power and noise amplifier has a cascode configuration having a common source transistor(M1) and a common gate transistor(M2) which are connected to each other in parallel. A common source transistor(M3) is connected to the common source transistor(M1) and the common gate transistor(M2) in series. Inductors(Lg,Ls) are used for an input impedance matching. An inductor(Ld) and a capacitor(C3) are used for an output impedance matching. A source of the common source transistor(M3) is bypassed by a bypass capacitor(C2). A signal is amplified by a gain of the cascode configuration. The amplified signal is inputted to a gate of the common source transistor(M3) so that the amplified signal is coupled and amplified by a capacitor(C1).
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申请公布号 |
KR20020055473(A) |
申请公布日期 |
2002.07.09 |
申请号 |
KR20000083709 |
申请日期 |
2000.12.28 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
KIL, JUN HO;KWON, IK JIN;SHIN, HYEONG CHEOL |
分类号 |
H03F1/26;H03F1/22;H03F3/193;(IPC1-7):H03F1/26 |
主分类号 |
H03F1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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