Non-volatile semiconductor memory device and method for manufacturing the same

摘要

The present invention relates to a non-volatile semiconductor memory device, having the higher margin of the implanted ion passing through a source-to-drain electrode, as well as the excellent covering power of an embedded layer deposited in and above a groove within a field oxide region distributed at both the source-to-drain electrode and a source area.The present invention also provides a method for manufacturing the non-volatile semiconductor memory device.