| 摘要 |
Conventional methods of forming a (111)-plane into a 45-degree-surface have employed a silicon wafer which requires a high processing cost, and methods utilizing an inexpensive (100) silicon wafer have not been successful in forming a 45-degree-surface having sufficient flatness. There is provided a method for manufacturing a semiconductor device preparing a substrate made of the (100) silicon wafer including steps of preparing a substrate made of the (100) silicon wafer, forming a pattern along a <100> direction of the (100) silicon, and etching with an anisotropic etchant using the pattern while applying an ultrasonic wave.
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