| 摘要 |
The field effect-controlled, vertical semiconductor component is disposed in a semiconductor element and contains at least one internal zone of the first conductivity type, at least one basic zone of the second conductivity type which adjoins the internal zone and a first surface of the semiconductor element, and at least one source zone of the first conductivity type which is disposed in the basic zone. At least one further basic zone of the second conductivity type is spaced apart from the basic zone by an intermediate zone of the first conductivity type, and at least one source contact zone is provided which connects the source zones, the basic zones and the further basic zones to one another with low impedance.
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