| 摘要 |
PURPOSE: A method for fabricating a pad of a semiconductor device is provided to minimize the influence upon the peripheral circuit of the second metal layer, by preventing a metal layer used in the pad in a ball grid array(BGA) package process from being peeled and by preventing a boat speed phenomenon of a photoresist layer used in a process for forming the second metal layer constituting the pad. CONSTITUTION: The first metal layer(13) is patterned on a semiconductor substrate(11) having a lower structure. The outside of the first metal layer is formed of a panel type. A planarization insulation layer as a spin-on-glass(SOG) insulation layer is formed on the first metal layer. The planarization insulation layer is etched to form a via contact hole(50) exposing the first metal layer and the semiconductor substrate. The via contact hole is filled with the second metal layer(21), wherein the second metal layer is applied on all of the region where the first metal layer is formed.
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