发明名称 ETCHING GAS AND ETCHING METHOD USING THE SAME
摘要 PURPOSE: An etching gas is provided to minimize a GWP(Global Warming Potential) due to a reduction of an MMTCE(Million Metric Tons of Carbon Equivalent) by etching an etched layer using an NCF(Non-Carbon Fluoride) etching gas instead of a PFC(Per-Fluoro Compound) etching gas. CONSTITUTION: An etching gas includes NF3 without a carbon fluoride. The etching gas further includes more than one gas selected among H2, CH4, C2H6, C2H5, C2H4, C3H8, C3H6, and combinations of the H2, the CH4, the C2H6, the C2H5, the C2H4, the C3H8, or the C3H6. And the etching gas further includes selected gases among Ar, N2, O2, CO, and mixed gas of the Ar, the N2, the O2, or the CO. At this point, the etching gas has no carbon fluoride, thereby considerably reducing an exhaust volume of a contaminated material.
申请公布号 KR20020054660(A) 申请公布日期 2002.07.08
申请号 KR20000083824 申请日期 2000.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, CHANG JU
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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