发明名称 HIGH SPEED SEMICONDUCTOR CHIP PACKAGE AND SUBSTRATE THEREOF
摘要 PURPOSE: A high speed semiconductor chip package and a substrate thereof are provided to secure the utmost use of the high speed semiconductor memory element by minimizing a roof inductance by a pattern of a substrate, and by maximumly shortening a current return route. CONSTITUTION: A substrate(20) electronically connects a semiconductor chip(10) to an outside of the substrate(20). An earth plate(24) is connected to an earth power source of the semiconductor chip(10). An insulating layer(26) is adhered to the earth plate(24). A pattern layer(25) is adhered to the insulating layer(26). The pattern layer(26) concludes an earth pattern(28). The earth pattern(28) is connected to a signal pattern(27) and the earth plate(24). The signal pattern(27) transmits and receives an electronic signal to the semiconductor chip(10). The earth pattern(28) concludes a bonding land(28a). The bonding land(28a) bonds a bonding wire(50) for connecting the semiconductor chip(10). The first earth via is formed at the bonding land(28a). The first earth via is connected to the earth plate(24). The bonding wire(50) is bonded with the first earth via.
申请公布号 KR20020054474(A) 申请公布日期 2002.07.08
申请号 KR20000083571 申请日期 2000.12.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG, TAE SEOP;LEE, DONG HO
分类号 H01L23/12;H01L23/28;H01L23/498;H01L23/66;H05K1/00;H05K1/11 主分类号 H01L23/12
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