| 摘要 |
PURPOSE: A formation method of low permittivity insulating layers of semiconductor devices is provided to improve a low permittivity characteristic, thermostability, and mechanical stability by forming an insulating layer using a silico aluminophosphate and a low permittivity polymer. CONSTITUTION: An insulating layer(12) is formed on a substrate(11) having a number of word lines, a number of bit lines, and a multiple of metal interconnections by coating with a low permittivity polymer mixed with a silico aluminophosphate so as to electrically insulate the conductive patterns of the substrate(11). Then, a bake process is performed to volatilize a solvent included in the insulating layer(12), so that the porous low permittivity insulating layer(12) is completed.
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