METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming the metal wiring of a semiconductor device is provided to enhance an electric characteristic such as a contact resistance by improving the burial characteristic of tungsten in a contact hole. CONSTITUTION: An interlayer insulation film(11) is formed on a semiconductor substrate(10). The contact hole(12) exposing an active area of the substrate is formed on the interlayer insulation film. A barrier metal film(13) is deposited on the surface of the contact hole in order to prevent the electron migration between the substrate and the metal wiring and the stress. The tungsten metal wiring is deposited on the barrier metal film by applying an ALD(Atomic Layer Deposition) method using SiH4 and WF6 as a reacting gas. A metal wiring film(15) burying the contact hole is formed on the entire surface after forming the metal wiring film(14). The metal wiring film composed of the tungsten film formed by reacting the WF6 gas and the reduction gas such as SiH4 or H2 gas in a chamber.