METHOD FOR MANUFACTURING TRANSISTOR OF SRAM

摘要

PURPOSE: A fabrication method of transistors of SRAMs(Static Random Access Memories) is provided to prevent oxide residues by depositing an oxide barrier layer before a gate oxidation. CONSTITUTION: After sequentially forming a gate insulating layer(12) and a conductive layer(13) on a semiconductor substrate(11), a gate is formed by patterning the conductive layer(13) and the gate insulating layer(12). At this time, the gate insulating layer(12) is residual to prevent a contact between the semiconductor substrate(11) and a following oxide barrier layer(100). Then, the oxide barrier layer(100) made of a capping nitride is deposited on the entire surface of the resultant structure with a thickness of 50 angstrom and an oxidation is performed on the resultant structure so as to restrain a plasma damage. At this time, the oxide barrier layer(100) prevents an oxidation of the conductive layer(13).