METHOD FOR MANUFACTURING TRANSISTOR OF SRAM DEVICE

摘要

PURPOSE: A method for manufacturing a transistor of an SRAM device is provided to restrain the residual oxide by controlling a thickness of an oxide film. CONSTITUTION: A gate insulation film(13) and a non-doped polysilicon film(14) is successively deposited on a semiconductor substrate(11). A doped polysilicon film(14a) is formed by performing an impurity ion implantation to the non-doped polysilicon film deposited on an upper portion of a cell area(12a). The second impurity ion implantation is performed on the doped polysilicon film and a capping nitride film(15) is formed on a surface. A gate is formed on the cell and nearby area(12a,12b) by patterning the capping nitride film. The thin oxide film is formed on the doped and the non-doped polysilicon film by performing an oxidation process to the surface of the results forming the gate in order to reduce the plasma damage due to the patterning process.