| 摘要 |
PURPOSE: A chemical mechanical polishing(CMP) method of a semiconductor device is provided to prevent a wafer from being over-polished by performing a two-step CMP process, and to improve reliability by improving a planarization characteristic. CONSTITUTION: The wafer(110) is installed in CMP equipment. The surface of the wafer is firstly polished in the following conditions. A head part(100) and a polishing part(200) of the CMP equipment have a rotation rate higher than a conventional rotation rate. The first and second pressure units(130,140) have a pressure lower than a conventional pressure. The pressure of a fixing unit(120) for supporting the wafer is a little lower than a conventional pressure. The surface of the wafer is secondly polished in the following conditions. The head part and the polishing part of the CMP equipment have a rotation rate lower than a conventional rotation rate. The first and second pressure units have a pressure a little lower than a conventional pressure. The pressure of the fixing unit for supporting the wafer is a little lower than a conventional pressure.
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