METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to simplify a fabricating process and to remarkably improve throughput of the fabricating process, by once depositing WNx through a chemical vapor deposition(CVD) process so that a contact hole is filled. CONSTITUTION: The contact hole is formed in an insulation layer(11) on a silicon semiconductor substrate(10) to expose the silicon semiconductor substrate. Titanium is deposited on the exposed silicon semiconductor substrate, the surface of the contact hole and the insulation layer by a CVD method. WNx is deposited on the deposited titanium layer(13) by a CVD method so that the contact hole is filled.