METHOD FOR FABRICATING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a contact of a semiconductor device is provided to guarantee a stable characteristic, by improving contact resistance, a junction leakage characteristic and a refresh characteristic. CONSTITUTION: An impurity junction layer(22) is formed in a semiconductor substrate(21). An interlayer dielectric(23) is formed on the semiconductor substrate. A photoresist layer(24) is applied on the interlayer dielectric and is patterned by an exposure and development process. The interlayer dielectric is dry-etched by using the patterned photoresist layer as a mask. Etch byproduct(25) generated after the dry etch process is eliminated by using microwave and radio frequency(RF) plasma.