METHOD FOR MANUFACTURING CMOS DEVICE

摘要

PURPOSE: A method for manufacturing a CMOS(Complementary Metal Oxide Semiconductor) device is provided to enhance the characteristic of each PMOS and NMOS device including to the CMOS device with a small number of processes. CONSTITUTION: An n-well(205) to form the PMOS is formed on a part of a p-type semiconductor substrate(200). An N-type first impurity area of the first concentration is formed on both sides of a gate pattern by the ion implantation. The n-type second impurity area of the second concentration is formed on the first impurity area by the ion implantation. After removing the first photoresist pattern, the substrate is heat-treated. A p-type third impurity area(250) of the third concentration is formed on the second area by the ion implantation. The p-type fourth impurity area(260) of the fourth concentration is formed on the third impurity area by the ion implantation. After removing the second photoresist pattern(PR2), the substrate is heat-treated. The second source/drain area and the second electrode are formed by driving in the injected impurities.