| 摘要 |
PURPOSE: A formation method of multilayer interconnections of semiconductor devices is provided to improve a conductivity between an upper and a lower metals by minimizing an exposure of an etch stopper made of a nitride. CONSTITUTION: A first metal interconnection(22), a first insulating layer(23), and an etch stopper(24) are sequentially formed on a substrate(21). After defining a via region by selectively etching the etch stopper(24), an insulating layer(25) for forming sidewalls is deposited on the resultant structure. At this time, the insulating layer(25) is formed to prevent an exposure of the etch stopper(24). After forming a second insulating layer(26) and a photoresist pattern(27), a trench is formed by selectively etching the second insulating layer(26) and the insulating layer(25). At this time, sidewalls are formed with the insulating layer(25) instead of polymers due to the etch stopper(24), thereby preventing a decrease of a conductivity between an upper and a lower metals.
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