| 摘要 |
PURPOSE: A formation method of isolation layers of semiconductor devices is provided to improve a characteristic and a reliability by depositing and planarizing a nitride on trenches. CONSTITUTION: After forming trenches on a semiconductor substrate(11) and depositing an insulating layer to completely fill the trenches, an isolation layers(17) are formed by etching the insulating layer using a CMP(Chemical Mechanical Polishing). Then, the isolation layers(17) are etched to a defined thickness extent of the trenches and a first nitride is removed. A second nitride(19) is formed on the entire surface of the resultant structure and a photoresist(21) is then formed to planarize the surface of the resultant structure. By selectively etching the second nitride(19) and completely removing the photoresist(21) using a difference of etch selectivity between the second nitride(19) and the photoresist(21), the trenches are completely filled with the second nitride(19) and the isolation layers(17).
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