发明名称 SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING
摘要 PURPOSE: Provided is slurry for polishing a metal layer, which can overcome process problems such as dishing, erosion or corrosion by improving selectivity of the slurry by using barbituric acid as a chemical additive capable of controlling chemical action of slurry. CONSTITUTION: The chemical mechanical polishing(CMP) slurry composition comprises deionized water, fine powder of metal oxides, oxidant, pH adjusting agent and barbituric acid. The oxidant is hydrogen peroxide and iron nitrate, and the pH adjusting agent is acetic acid. The content of the fine powder of metal oxides is 0.1-10 wt%, content of the hydrogen peroxide is 1-3 wt%, content of the iron nitrate is 0.03-0.1 wt%, content of the acetic acid is 0.05-0.2 wt%, the content of the barbituric acid is 0.01-0.4 wt%, and the rest of the composition is deionized water. The CMP slurry composition is used to polish tungsten, aluminum, or alloy comprising them.
申请公布号 KR20020054529(A) 申请公布日期 2002.07.08
申请号 KR20000083650 申请日期 2000.12.28
申请人 CHEIL INDUSTRIES INC. 发明人 CHOI, JAE SEUNG;KIM, SEOK JIN;LEE, GIL SEONG;LEE, JAE SEOK
分类号 C09K3/14 主分类号 C09K3/14
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