| 摘要 |
PURPOSE: A magnetic RAM(Random Access Memory) is provided to improve a high integration degree and to simplify a structure by using the first word line as a read line and a write line at the same time. CONSTITUTION: A magnetic RAM comprises a gate electrode(113) as the first word line capable of using as a write line and a read line formed in an active region of a semiconductor substrate(111), a ground line(117) formed at one side of the first word line, a lower lead layer(119) formed at the other side of the first word line, a seed layer(127) connected with the lower lead layer(119) and overlapped over the first word line, an MTJ(Magnetic Tunnel Junction) cell(137) formed on the seed layer(127), and an upper lead layer(141) as a bit line is formed on the MTJ cell(137).
|
