| 摘要 |
PURPOSE: A formation method of copper interconnections of semiconductor devices is provided to prevent a copper diffusion through an interlayer dielectric during a copper interconnection deposition by forming a barrier metal without a defect. CONSTITUTION: After forming an insulating layer(12) on a semiconductor substrate(11) having a defined structure and patterning the insulating layer(12) using a single or a dual damascene process, a first barrier metal(13A) made of Ta, TaN, WN, TiN, TiW, TiSiN, WBN, or WC is deposited on the resultant structure. Then, an amorphous layer(13B) is formed on the surface of the first barrier metal(13A) by exposing the first barrier metal(13A) to the air or by performing a thermal treatment at N2, Ar, H2, or a mixed gas atmosphere, thereby preventing a defect and improving a barrier property. Then, a second barrier metal(13C) is formed on the resultant structure and copper metals are then formed.
|
