| 摘要 |
PURPOSE: A method for fabricating a capacitor is provided to use a ruthenium thin film as a lower electrode in a dynamic random access memory(DRAM) or ferroelectric random access memory(FeRAM), by eliminating oxygen in the ruthenium thin film deposited by a metal organic chemical vapor deposition(MOCVD) method so that the ruthenium thin film is formed while a lower oxide barrier layer is not oxidized in a subsequent heat treatment process. CONSTITUTION: The first metal thin film for preventing oxidation is formed on a semiconductor layer(21). The second metal thin film for an electrode is formed on the first metal thin film. The third metal thin film which is oxidized at a temperature relatively lower than that of the first metal thin film, is formed on the second metal thin film. A heat treatment process is performed regarding the third metal thin film to form a metal oxide layer on the second metal thin film. The metal oxide layer is eliminated.
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