| 摘要 |
PURPOSE: The structure of a dummy bit line on a cell block is provided to improve the structure of a dummy bit line by binding both sides of a dummy bit line. CONSTITUTION: A dummy bit line(2) is formed on an edge portion of a cell block. The dummy bit line(2) is used for protecting a bit line which is formed in the inside of the cell block. The dummy bit line(2) is formed on a dummy field oxide layer in order to enhance cell efficiency. The width of the dummy bit line(2) corresponds to the width of the bit line of formed in the inside of the cell block. A pitch of the dummy bit line(2) corresponds to the pitch of the bit line of formed in the inside of the cell block. A redundancy bit line is formed at a side of the dummy bit line(2). A bit line bridge(5) is formed between the dummy bit lines(2). The first column address(4) is connected to an amplification terminal combined with the dummy bit line(2).
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